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| SUD15P01-52 New Product Vishay Siliconix P-Channel 8-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.052 @ VGS = -4.5 V -8 0.070 @ VGS = -2.5 V 0.105 @ VGS = -1.8 V FEATURES ID (A) -15 -13 -10.5 D TrenchFETr Power MOSFET D 175_C Junction Temperature D Low Gate Threshold APPLICATIONS D Pass Transistor for LDOs S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD15P01-52 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit -8 "8 -15 -8.7 -25 -10 5 21.4b, c 1.5c -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Junction-to-Ambientb Junction-to-Case Notes: a. Duty cycle v 1%. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. Steady State RthJA RthJC Symbol Typical 40 80 5.6 Maximum 50 100 7 Unit _C/W C/W Document Number: 71806 S-20966--Rev. B, 01-Jul-02 www.vishay.com 1 SUD15P01-52 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -6.4 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -6.4 V, VGS = 0 V, TJ = 125_C VDS = -6.4 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta VDS = -5 V, VGS = -4.5 V ID(on) VDS = -5 V, VGS = -2.5 V VGS = -4.5 V, ID = -10 A VGS = -4.5 V, ID = -13 A, TJ = 125_C Drain-Source On-State Resistancea rDS(on) VGS = -4.5 V, ID = -13 A, TJ = 175_C VGS = -2.5 V, ID = -5 A VGS = -1.8 V, ID = -2 A Forward Transconductancea gfs VDS = -5 V, ID = -10 A 16 -25 -10 0.043 0.052 0.065 0.075 0.070 0.105 S W A -8 -0.45 -0.8 "100 -1 -50 -150 m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = -4 V, RL = 0.22 W ID ] -15 A, VGEN = -4.5 V, RG = 2.5 W VDS = -4 V, VGS = -4.5 V, ID = -10 A VGS = 0 V, VDS = -4 V, f = 1 MHz 1300 430 245 10.5 1.6 2 10 16 30 25 20 25 45 40 ns 15 nC pF Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Is ISM VSD trr IF = -15 A, VGS = 0 V IF = -15 A, di/dt = 100 A/ms 45 -15 A -25 -1.5 75 V ns Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71806 S-20966--Rev. B, 01-Jul-02 SUD15P01-52 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 4.5 V 48 I D - Drain Current (A) 4V I D - Drain Current (A) 3.5 V 36 3V 24 2.5 V 2V 12 1.5 V 1V 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 16 20 TC = -55_C 25_C Vishay Siliconix Transfer Characteristics 125_C 12 8 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 25 TC = -55_C 25_C 15 125_C r DS(on)- On-Resistance ( W ) 0.20 On-Resistance vs. Drain Current 20 g fs - Transconductance (S) 0.16 0.12 VGS = 1.8 V 0.08 VGS = 2.5 V VGS = 4.5 V 0.04 10 5 0 0 5 10 15 20 25 0.00 0 5 10 15 20 25 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 2000 8 Gate Charge 1600 C - Capacitance (pF) Ciss 1200 V GS - Gate-to-Source Voltage (V) 6 VDS = 4 V ID = 10 A 4 800 Coss 400 Crss 0 0 2 4 6 8 2 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 71806 S-20966--Rev. B, 01-Jul-02 www.vishay.com 3 SUD15P01-52 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 1.6 VGS = 4.5 V ID = 10 A r DS(on)- On-Resistance ( W ) (Normalized) 1.4 I S - Source Current (A) 10 TJ = 25_C TJ = 150_C 30 Source-Drain Diode Forward Voltage 1.2 1.0 0.8 0.6 -50 1 -25 0 25 50 75 100 125 150 175 0.0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 18 100.0 Safe Operating Area 15 I D - Drain Current (A) I D - Drain Current (A) 100 ms 10.0 Limited by rDS(on) 12 1 ms 10 ms 100 ms dc, 1 s 9 6 1.0 TC = 25_C Single Pulse 3 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.1 0.1 1.0 VDS - Drain-to-Source Voltage (V) 10.0 Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71806 S-20966--Rev. B, 01-Jul-02 1 10 100 4 |
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